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home > 4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade > 4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade

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4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade8 inch diameter Silicon Carbide (SiC) Wafers Specifications Grade Zero MPD Grade Dummy Grade Diameter 199. 5 200 mm Thickness 500 um + 25 um 350 um + 25 um Wafer Orientation Off axis: 4. 0 deg toward <11 20> + 0. 5 deg Micropipe Density (MPD) <0. 5 cm 2 <30 cm 2 TTV Bow Warp <10um 35um <70um <15um 50um <100um Electrical Resistivity (Ohm cm) 0. 015~0. 028 Notch {10 10} + 5. 0 deg Edge exclusion 3 mm Surface Roughness Optical Polish Ra 1 nm CMP Ra 0. 5

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8 inch diameter Silicon Carbide (SiC) Wafers Specifications

Grade	Zero MPD Grade	Dummy Grade
Diameter	199.5-200 mm
Thickness	500 um +/- 25 um 350 um +/- 25 um
Wafer Orientation	Off axis: 4.0 deg toward <11-20> +/-0.5 deg
Micropipe Density (MPD)	<0.5 cm^-2	<30 cm^-2
TTV /Bow /Warp	<10um /±35um /<70um	<15um /±50um /<100um
Electrical Resistivity (Ohm-cm)	0.015~0.028
Notch	{10-10} +/- 5.0 deg
Edge exclusion	3 mm
Surface Roughness	Optical Polish Ra 1 nm
Surface Roughness	CMP Ra 0.5 nm on the Si face
Cracks by high intensity light	None	Cumulative length 30 mm, single length 2 mm
Hex Plates by high intensity light*	Cumulative area 0.05 %	Cumulative area 0.1 %
Polytype Areas by high intensity light*	None	Cumulative area 3%
Scratches by high intensity light**	None	5 scratches to 1 x wafer diameter cumulative length
Edge chip	None permitted >0.2mm width and depth	9 allowed, 1 mm each
Contamination by high intensity light	None

Notes:

* Defect limits are applicable to the entire wafer surface except for the edge exclusion area, where defects are present.

** The scratches are checked on the Si face only.

Inside the wafer case, the side with laser marking of the serial number is the Carbon face. The Si face is facing down and the Carbon face is facing up.

PROPERTIES OF 4H SILICON CARBIDE CRYSTAL MATERIAL

Property	4H-SiC Single Crystal
Lattice Parameters (Å)	a=3.076 c=10.053
Stacking Sequence	ABCB
Density	3.21
Mohs Hardness	~9.2
Thermal Expansion Coefficient (CTE) (/K)	4-5 x 10^-6
Refraction Index @750nm	no = 2.61 ne = 2.66
Dielectric Constant	c ~ 9.66
Doping Type	N-type or Semi-insulating
Thermal Conductivity (W/cm-K @298K) (N-type, 0.02 ohm-cm)	a~4.2 c~3.7
Thermal Conductivity (W/cm-K @298K) (Semi-insulating type)	a~4.9 c~3.9
Band-gap (eV)	3.23
Break-Down Electrical Field (V/cm)	3-5 x 10⁶
Saturation Drift Velocity (m/s)	2.0 x 10⁵
Wafer and Substrate Sizes	Wafers: 2, 4, 6, 8 inch; smaller substrates: 10x10, 20x20 mm, other sizes are available and can be custom-made upon request

Price

Advance Supplies offers the best price on the market for high quality SiC wafers and SiC crystal substrates up to six (6) inch diameter. Our price matching policy guarantees you the best price for the SiC crystal products with comparable specifications. Contact us today to get your quote.

Customization

Customized SiC crystal products can be made to meet customer's particular requirements and specifications.

4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade

Name: 4 in Silicon Carbide 4H-SiC Semi-insulating Ingot, Dummy Grade
Brand: jimkephartwoodturning.com
SKU: 40925914319
Price: 3250.00 USD
Availability: InStock
Rating: 4.824400000000001 (1997 reviews)